Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

UCC27423-Q1 Datasheet(PDF) 18 Page - Texas Instruments

Click here to check the latest version.
Part No. UCC27423-Q1
Description  DUAL 4-A HIGH-SPEED LOW-SIDE MOSFET DRIVERS WITH ENABLE
Download  28 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
Logo 

UCC27423-Q1 Datasheet(HTML) 18 Page - Texas Instruments

Zoom Inzoom in Zoom Outzoom out
 18 / 28 page
background image
UCC27423-Q1
UCC27424-Q1
UCC27425-Q1
SGLS274D
– SEPTEMBER 2008 – REVISED AUGUST 2011
www.ti.com
This equation allows a power designer to calculate the bias power required to drive a specific MOSFET gate at a
specific bias voltage.
Enable
UCC2742x provide dual enable inputs for improved control of each driver channel operation. The inputs
incorporate logic compatible thresholds with hysteresis. They are internally pulled up to VDD with 100-kΩ resistor
for active high operation. When ENBA and ENBB are driven high, the drivers are enabled; when ENBA and
ENBB are low, the drivers are disabled. The default state of the enable pin is to enable the driver and, therefore,
can be left open for standard operation. The output states when the drivers are disabled is low, regardless of the
input state. See for operation using enable logic.
Enable inputs are compatible with both logic signals and slowly changing analog signals. They can be directly
driven, or a power-up delay can be programmed with a capacitor between ENBA/ENBB and GND. ENBA and
ENBB control input A and input B, respectively.
Thermal Information
The useful range of a driver is greatly affected by the drive power requirements of the load and the thermal
characteristics of the IC package. For a power driver to be useful over a particular temperature range, the
package must allow for the efficient removal of the heat produced while keeping the junction temperature within
rated limits.
As shown in the power dissipation rating table, the SOIC-8 (D) package has a power rating of approximately 0.5
W with TA = 70°C. This limit is imposed in conjunction with the power derating factor also given in the table. Note
that the power dissipation in the previous example is 0.432 W with a 10-nF load, 12-V VDD, switched at 300 kHz.
Thus, only one load of this size could be driven using the D package, even if the two onboard drivers are
paralleled.
References
[1] Laszlo Balogh, Power Supply Seminar SEM-1400 Topic 2: Design And Application Guide For High Speed
MOSFET Gate Drive Circuits (SLUP133)
[2] Bill Andreycak, Practical Considerations in High Performance MOSFET, IGBT and MCT Gate Drive Circuits
(SLUA105)
18
Copyright
© 2008–2011, Texas Instruments Incorporated


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn