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UCC27423-Q1 Datasheet(PDF) 18 Page - Texas Instruments

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Part No. UCC27423-Q1
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Manufacturer  TI1 [Texas Instruments]
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UCC27423-Q1 Datasheet(HTML) 18 Page - Texas Instruments

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This equation allows a power designer to calculate the bias power required to drive a specific MOSFET gate at a
specific bias voltage.
UCC2742x provide dual enable inputs for improved control of each driver channel operation. The inputs
incorporate logic compatible thresholds with hysteresis. They are internally pulled up to VDD with 100-kΩ resistor
for active high operation. When ENBA and ENBB are driven high, the drivers are enabled; when ENBA and
ENBB are low, the drivers are disabled. The default state of the enable pin is to enable the driver and, therefore,
can be left open for standard operation. The output states when the drivers are disabled is low, regardless of the
input state. See for operation using enable logic.
Enable inputs are compatible with both logic signals and slowly changing analog signals. They can be directly
driven, or a power-up delay can be programmed with a capacitor between ENBA/ENBB and GND. ENBA and
ENBB control input A and input B, respectively.
Thermal Information
The useful range of a driver is greatly affected by the drive power requirements of the load and the thermal
characteristics of the IC package. For a power driver to be useful over a particular temperature range, the
package must allow for the efficient removal of the heat produced while keeping the junction temperature within
rated limits.
As shown in the power dissipation rating table, the SOIC-8 (D) package has a power rating of approximately 0.5
W with TA = 70°C. This limit is imposed in conjunction with the power derating factor also given in the table. Note
that the power dissipation in the previous example is 0.432 W with a 10-nF load, 12-V VDD, switched at 300 kHz.
Thus, only one load of this size could be driven using the D package, even if the two onboard drivers are
[1] Laszlo Balogh, Power Supply Seminar SEM-1400 Topic 2: Design And Application Guide For High Speed
MOSFET Gate Drive Circuits (SLUP133)
[2] Bill Andreycak, Practical Considerations in High Performance MOSFET, IGBT and MCT Gate Drive Circuits
© 2008–2011, Texas Instruments Incorporated

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