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10UT10FNTR Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. 10UT10FNTR
Description  High Performance Generation 5.0 Schottky Rectifier, 10 A
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

10UT10FNTR Datasheet(HTML) 2 Page - Vishay Siliconix

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VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
Revision: 02-Nov-11
2
Document Number: 94647
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse width < 300 μs, duty cycle < 2 %
(2) Only 1 anode pin connected
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNITS
Forward voltage drop
VFM (1)(2)
5 A
TJ = 25 °C
0.630
-
V
10 A
0.735
0.810
20 A
0.840
0.890
5 A
TJ = 125 °C
0.530
-
10 A
0.615
0.660
20 A
0.730
0.770
Reverse leakage current
IRM (1)
TJ = 25 °C
VR = Rated VR
-50
μA
TJ = 125 °C
-
4
mA
Junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
400
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
8.0
-
nH
Maximum voltage rate of change
dV/dt
Rated VR
-
10 000
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
2
°C/W
Typical thermal resistance,
case to heatsink
RthCS
0.3
Approximate weight
0.3
g
0.01
oz.
Marking device
Case style I-PAK
10UT10
Case style D-PAK
10WT10FN
VFM - Forward Voltage Drop (V)
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
1.8
1
100
10
T
J = 25 °C
T
J = 125 °C
T
J = 175 °C
VR - Reverse Voltage (V)
020
40
60
80
100
0.0001
0.001
0.01
0.1
1
10
100
25 °C
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C


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