Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

10UT10FNTR Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. 10UT10FNTR
Description  High Performance Generation 5.0 Schottky Rectifier, 10 A
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

10UT10FNTR Datasheet(HTML) 1 Page - Vishay Siliconix

  10UT10FNTR Datasheet HTML 1Page - Vishay Siliconix 10UT10FNTR Datasheet HTML 2Page - Vishay Siliconix 10UT10FNTR Datasheet HTML 3Page - Vishay Siliconix 10UT10FNTR Datasheet HTML 4Page - Vishay Siliconix 10UT10FNTR Datasheet HTML 5Page - Vishay Siliconix 10UT10FNTR Datasheet HTML 6Page - Vishay Siliconix 10UT10FNTR Datasheet HTML 7Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
VS-10UT10, VS-10WT10FN
www.vishay.com
Vishay Semiconductors
Revision: 02-Nov-11
1
Document Number: 94647
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Generation 5.0 Schottky Rectifier, 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
APPLICATIONS
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
Note
(1) Measured connecting 2 anode pins
PRODUCT SUMMARY
Package
I-PAK (TO-251AA),
D-PAK (TO-252AA)
IF(AV)
10 A
VR
100 V
VF at IF
0.66 V
IRM max.
4 mA at 125 °C
TJ max.
175 °C
Diode variation
Single die
EAS
54 mJ
I-PAK (TO-251AA)
D-PAK (TO-252AA)
VS-10UT10
VS-10WT10FN
Base
cathode
Anode
Anode
Cathode
4
3
2
1
Base
cathode
Anode
Anode
Cathode
4
3
2
1
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
VRRM
100
V
VF
10 Apk, TJ = 125 °C (typical)
0.615
V
TJ
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VS-10UT10
VS-10WT10FN
UNITS
Maximum DC reverse voltage
VR
TJ = 25 °C
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TC = 159 °C, rectangular waveform
10
A
Maximum peak one cycle
non-repetitive surge current
IFSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM applied (1)
610
A
10 ms sine or 6 ms rect. pulse
110
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 3 A, L = 12 mH
54
mJ
Repetitive avalanche current
IAR
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
IAS at
TJ max.
A


Html Pages

1  2  3  4  5  6  7 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn