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10UT10 Datasheet(PDF) 4 Page - Vishay Siliconix |
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10UT10 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors Revision: 02-Nov-11 4 Document Number: 94647 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) tp - Square Wave Pulse Duration (µs) 10 100 1000 10 000 10 1000 100 1 10 100 110 Rectangular Pulse Duration (µs) 100 T J = 25 °C T J = 125 °C T J = 175 °C 1 10 100 110 Rectangular Pulse Duration (µs) 100 T J = 25 °C T J = 125 °C T J = 175 °C |
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