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BSM50GD60DN2 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BSM50GD60DN2
Description  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM50GD60DN2 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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Semiconductor Group
1
Jan-10-1997
BSM 50 GD 60 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
VCE
IC
Package
Ordering Code
BSM 50 GD 60 DN2
600V
50A
ECONOPACK 2K
C67076-A2515-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
600
V
Collector-gate voltage
RGE = 20 kΩ
VCGR
600
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 40 °C
IC
50
A
Pulsed collector current,
tp = 1 ms
TC = 40 °C
ICpuls
100
Power dissipation per IGBT
TC = 25 °C
Ptot
200
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 0.6
K/W
Diode thermal resistance, chip case
RthJCD
≤ 1.5
Insulation test voltage,
t = 1min.
Vis
2500
Vac
Creepage distance
-
16
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
sec
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56


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