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BSM50GD120DN2G Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BSM50GD120DN2G
Description  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM50GD120DN2G Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
2
Aug-23-1996
BSM 50 GD 120 DN2G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 2 mA
VGE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
VGE = 15 V, IC = 50 A, Tj = 25 °C
VGE = 15 V, IC = 50 A, Tj = 125 °C
VCE(sat)
-
-
3.1
2.5
3.7
3
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
-
4
0.8
-
1
mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
IGES
-
-
200
nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 50 A
gfs
23
-
-
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss
-
3300
-
pF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss
-
500
-
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss
-
220
-


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