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BSM50GD120DN2G Datasheet(PDF) 4 Page - Siemens Semiconductor Group

Part No. BSM50GD120DN2G
Description  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM50GD120DN2G Datasheet(HTML) 4 Page - Siemens Semiconductor Group

   
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Semiconductor Group
4
Aug-23-1996
BSM 50 GD 120 DN2G
Power dissipation
P
tot = ƒ(TC)
parameter: Tj ≤ 150 °C
0
20
40
60
80
100
120
°C
160
T
C
0
50
100
150
200
250
300
350
W
450
P
tot
Safe operating area
I
C = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 µs
t
p
= 14.0µs
Collector current
I
C = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
0
20
40
60
80
100
120
°C
160
T
C
0
5
10
15
20
25
30
35
40
45
50
55
60
65
A
75
I
C
Transient thermal impedance
IGBT
Z
th JC = ƒ(tp)
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50


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