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BSM50GB170DN2 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BSM50GB170DN2
Description  IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM50GB170DN2 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Jul-31-1996
BSM 50 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 1200 V, VGE = 15 V, IC = 50 A
RGon = 27 Ω
td(on)
-
350
700
ns
Rise time
VCC = 1200 V, VGE = 15 V, IC = 50 A
RGon = 27 Ω
tr
-
150
300
Turn-off delay time
VCC = 1200 V, VGE = -15 V, IC = 50 A
RGoff = 27 Ω
td(off)
-
650
1000
Fall time
VCC = 1200 V, VGE = -15 V, IC = 50 A
RGoff = 27 Ω
tf
-
90
140
Free-Wheel Diode
Diode forward voltage
IF = 50 A, VGE = 0 V, Tj = 25 °C
IF = 50 A, VGE = 0 V, Tj = 125 °C
VF
-
-
2.1
2.3
-
2.8
V
Reverse recovery time
IF = 50 A, VR = -1200 V, VGE = 0 V
diF/dt = -600 A/µs, Tj = 125 °C
trr
-
0.3
-
µs
Reverse recovery charge
IF = 50 A, VR = -1200 V, VGE = 0 V
diF/dt = -600 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
-
12
4
-
-
µC


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