BSM50GB170DN2 datasheet(3/9 Pages) SIEMENS | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

Part #	BSM50GB170DN2

Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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3 / 9 page

Semiconductor Group

3

Jul-31-1996

BSM 50 GB 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

VCC = 1200 V, VGE = 15 V, IC = 50 A

RGon = 27 Ω

td(on)

-

350

700

ns

Rise time

VCC = 1200 V, VGE = 15 V, IC = 50 A

RGon = 27 Ω

tr

-

150

300

Turn-off delay time

VCC = 1200 V, VGE = -15 V, IC = 50 A

RGoff = 27 Ω

td(off)

-

650

1000

Fall time

VCC = 1200 V, VGE = -15 V, IC = 50 A

RGoff = 27 Ω

tf

-

90

140

Free-Wheel Diode

Diode forward voltage

IF = 50 A, VGE = 0 V, Tj = 25 °C

IF = 50 A, VGE = 0 V, Tj = 125 °C

VF

-

2.1

2.3

-

2.8

V

Reverse recovery time

IF = 50 A, VR = -1200 V, VGE = 0 V

diF/dt = -600 A/µs, Tj = 125 °C

trr

-

0.3

-

µs

Reverse recovery charge

IF = 50 A, VR = -1200 V, VGE = 0 V

diF/dt = -600 A/µs

Tj = 25 °C

Tj = 125 °C

Qrr

-

12

4

-

µC

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BSM50GB170DN2 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

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