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BSM50GB170DN2 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BSM50GB170DN2 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page ![]() Semiconductor Group 8 Jul-31-1996 BSM 50 GB 170 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 0.0 0.5 1.0 1.5 2.0 2.5 V 3.5 V F 0 10 20 30 40 50 60 70 80 A 100 I F T j=25°C =125°C j T Transient thermal impedance Diode Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W Z thJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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