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BSM50GB170DN2 Datasheet(PDF) 4 Page - Siemens Semiconductor Group

Part No. BSM50GB170DN2
Description  IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSM50GB170DN2 Datasheet(HTML) 4 Page - Siemens Semiconductor Group

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Semiconductor Group
4
Jul-31-1996
BSM 50 GB 170 DN2
Power dissipation
P
tot = ƒ(TC)
parameter: Tj ≤ 150 °C
0
20
40
60
80
100
120
°C
160
T
C
0
50
100
150
200
250
300
350
400
450
W
550
P
tot
Safe operating area
I
C = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 µs
10 µs
t
p
= 1.6µs
Collector current
I
C = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
0
20
40
60
80
100
120
°C
160
T
C
0
10
20
30
40
50
60
70
A
90
I
C
Transient thermal impedance
IGBT
Z
th JC = ƒ(tp)
parameter: D = tp / T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50


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