BSM50GAL120DN2 datasheet(2/5 Pages) SIEMENS

Part #	BSM50GAL120DN2

Description	IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

2

Mar-29-1996

BSM 50 GAL 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 2 mA

VGE(th)

4.5

5.5

6.5

V

Collector-emitter saturation voltage

VGE = 15 V, IC = 50 A, Tj = 25 °C

VGE = 15 V, IC = 50 A, Tj = 125 °C

VCE(sat)

-

3.1

2.5

3.7

3

Zero gate voltage collector current

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

ICES

-

4

0.8

-

1

mA

Gate-emitter leakage current

VGE = 20 V, VCE = 0 V

IGES

-

200

nA

AC Characteristics

Transconductance

VCE = 20 V, IC = 50 A

gfs

23

-

S

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Ciss

-

3.3

-

nF

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Coss

-

0.5

-

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Crss

-

0.25

-

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BSM50GAL120DN2 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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