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BSM400GB60DN2 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BSM400GB60DN2
Description  IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSM400GB60DN2 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
2
Apr-25-1997
BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 9 mA
VGE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
VGE = 15 V
IC = 400 A
Tj = 25 °C
Tj = 125 °C
VCE(sat)
-
-
2.2
2.1
2.65
2.55
Zero gate voltage collector current
VCE = 600 V, VGE = 0 V, Tj = 25 °C
VCE = 600 V, VGE = 0 V, Tj = 125 °C
ICES
-
-
25
5
-
-
mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
IGES
-
-
1
µA
AC Characteristics
Transconductance
VCE = 20 V, IC = 400 A
gfs
100
-
-
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss
-
22
-
nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss
-
2.5
-
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss
-
1.5
-


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