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BSM400GA120DL Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BSM400GA120DL
Description  IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM400GA120DL Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
2
Feb-14-1997
BSM 400 GA 120 DL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 16 mA
VGE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
VGE = 15 V, IC = 400 A, Tj = 25 °C
VGE = 15 V, IC = 400 A, Tj = 125 °C
VCE(sat)
-
-
2.5
2.2
3
2.6
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
-
-
-
-
15
mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
IGES
-
-
400
nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 400 A
gfs
-
-
-
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss
-
26
-
nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss
-
4
-
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss
-
2
-


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