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BSM35GD120D2 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part No. BSM35GD120D2
Description  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM35GD120D2 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

   
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Semiconductor Group
6
Feb-10-1997
BSM 35 GD 120 D2
Typ. gate charge
V
GE = ƒ(QGate)
parameter: IC puls = 35 A
0
40
80
120
160
nC
220
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V
600 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
0
5
10
15
20
25
30
V
40
V
CE
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
0
200
400
600
800
1000 1200
V
1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/I
C
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH
0
200
400
600
800
1000 1200
V
1600
V
CE
0
2
4
6
8
12
I
Csc
/I
C


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