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BSM35GD120D2 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BSM35GD120D2 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 9 page ![]() Semiconductor Group 6 Feb-10-1997 BSM 35 GD 120 D2 Typ. gate charge V GE = ƒ(QGate) parameter: IC puls = 35 A 0 40 80 120 160 nC 220 Q Gate 0 2 4 6 8 10 12 14 16 V 20 V GE 800 V 600 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 V CE -2 10 -1 10 0 10 1 10 nF C Ciss Coss Crss Reverse biased safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V 0 200 400 600 800 1000 1200 V 1600 V CE 0.0 0.5 1.0 1.5 2.5 I Cpuls /I C Short circuit safe operating area ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 0 200 400 600 800 1000 1200 V 1600 V CE 0 2 4 6 8 12 I Csc /I C |