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BSM35GD120D2 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BSM35GD120D2 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
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Semiconductor Group 4 Feb-10-1997 BSM 35 GD 120 D2 Power dissipation P tot = ƒ(TC) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0 20 40 60 80 100 120 140 160 180 200 220 240 260 W 300 P tot Safe operating area I C = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 3 10 A I C 10 0 10 1 10 2 10 3 V V CE DC 10 ms 1 ms 100 µs t p = 18.0µs Collector current I C = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0 5 10 15 20 25 30 35 40 45 A 55 I C Transient thermal impedance IGBT Z th JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W Z thJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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