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BSM300GA120DN2E3166 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BSM300GA120DN2E3166
Description  IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM300GA120DN2E3166 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Mar-29-1996
BSM300GA120DN2E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 300 A
RGon = 3.3 Ω
td(on)
-
100
200
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 300 A
RGon = 3.3 Ω
tr
-
110
220
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 300 A
RGoff = 3.3 Ω
td(off)
-
600
800
Fall time
VCC = 600 V, VGE = -15 V, IC = 300 A
RGoff = 3.3 Ω
tf
-
80
120
Free-Wheel Diode
Diode forward voltage
IF = 300 A, VGE = 0 V, Tj = 25 °C
IF = 300 A, VGE = 0 V, Tj = 125 °C
VF
-
1.4
1.35
1.8
-
2.3
V
Reverse recovery time
IF = 300 A, VR = -600 V, VGE = 0 V
diF/dt = -2500 A/µs, Tj = 125 °C
trr
-
0.6
-
µs
Reverse recovery charge
IF = 300 A, VR = -600 V, VGE = 0 V
diF/dt = -2500 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
-
45
16
-
-
µC


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