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BSM25GD120D2 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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BSM25GD120D2 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
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Semiconductor Group 7 Feb-10-1997 BSM 25 GD 120 D2 Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω 0 10 20 30 40 A 60 I C 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching time t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A 0 20 40 60 80 100 120 140 Ω 180 R G 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω 0 10 20 30 40 A 60 I C 0 1 2 3 4 5 6 7 8 mWs 10 E Eon Eoff Typ. switching losses E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 25 A 0 20 40 60 80 100 120 140 Ω 180 R G 0 1 2 3 4 5 6 7 8 mWs 10 E Eon Eoff |
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