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BSM200GB120 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BSM200GB120
Description  IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM200GB120 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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Semiconductor Group
1
Feb-14-1997
BSM 200 GB 120 DL
IGBT Power Module
Preliminary data
• Low Loss IGBT
• Low inductance halfbridge
• Including fast free- wheeling diodes
• Package with insulated metal base plate
Type
VCE
IC
Package
Ordering Code
BSM 200 GB 120 DL
1200V 340A
HALF-BRIDGE 2
C67076-A2300-A70
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 kΩ
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
200
340
A
Pulsed collector current,
tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
400
680
Power dissipation per IGBT
TC = 25 °C
Ptot
1400
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-40 ... + 125
Thermal resistance, chip case
RthJC
≤ 0.09
K/W
Diode thermal resistance, chip case
RthJCD
≤ 0.18
Insulation test voltage,
t = 1min.
Vis
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
sec
IEC climatic category, DIN IEC 68-1
-
40 / 125 / 56


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