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BSM200GB120 Datasheet(PDF) 5 Page - Siemens Semiconductor Group

Part No. BSM200GB120
Description  IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM200GB120 Datasheet(HTML) 5 Page - Siemens Semiconductor Group

   
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Semiconductor Group
5
Feb-14-1997
BSM 200 GB 120 DL
Typ. output characteristics
IC = f (VCE)
parameter:
tp = 80 µs, Tj = 25 °C
0
1
2
3
V
5
V
CE
0
50
100
150
200
250
300
A
400
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
IC = f (VCE)
parameter:
tp = 80 µs, Tj = 125 °C
0
1
2
3
V
5
V
CE
0
50
100
150
200
250
300
A
400
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
IC = f (VGE)
parameter:
tp = 80 µs, VCE = 20 V
0
2
4
6
8
10
V
14
V
GE
0
50
100
150
200
250
300
A
400
I
C


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