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BSM181F Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BSM181F Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 7 page Semiconductor Group 64 03.96 V DS = 800 V I D = 34 A R DS(on) = 0.32 Ω q Power module q Single switch q FREDFET q N channel q Enhancement mode q Package with insulated metal base plate q Package outline/Circuit diagram: 1 1) SIMOPAC® Module BSM 181 F Type Ordering Code BSM 181 F C67076-A1052-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 800 V Drain-gate voltage, R GS = 20 kΩ V DGR 800 Gate-source voltage V GS ± 20 Continuous drain current, T C = 25 ˚C I D 34 A Pulsed drain current, T C = 25 ˚C I D puls 136 Operating and storage temperature range T j, Tstg – 55 … + 150 ˚C Power dissipation, T C = 25 ˚C P tot 700 W Thermal resistance Chip-case R th JC ≤ 0.18 K/W Insulation test voltage2), t = 1 min. V is 2500 V ac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. |
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