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BSM15GD60DN2 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BSM15GD60DN2
Description  IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM15GD60DN2 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Jan-09-1997
BSM 15 GD 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 300 V, VGE = 15 V, IC = 15 A
RGon = 68 Ω
td(on)
-
35
70
ns
Rise time
VCC = 300 V, VGE = 15 V, IC = 15 A
RGon = 68 Ω
tr
-
50
100
Turn-off delay time
VCC = 300 V, VGE = -15 V, IC = 15 A
RGoff = 68 Ω
td(off)
-
250
370
Fall time
VCC = 300 V, VGE = -15 V, IC = 15 A
RGoff = 68 Ω
tf
nS
Free-Wheel Diode
Diode forward voltage
IF = 15 A, VGE = 0 V, Tj = 25 °C
IF = 15 A, VGE = 0 V, Tj = 125 °C
VF
-
-
1.9
1.6
-
-
V
Reverse recovery time
IF = 15 A, VR = -300 V, VGE = 0 V
diF/dt = -150 A/µs, Tj = 125 °C
trr
-
0.11
-
µs
Reverse recovery charge
IF = 15 A, VR = -300 V, VGE = 0 V
diF/dt = -150 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
-
0.9
0.4
-
-
µC


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