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C67076-A1050-A2 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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C67076-A1050-A2 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 7 page Semiconductor Group 52 Electrical Characteristics (cont’d) at T j = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Fast-recovery reverse diode Continuous reverse drain current T C = 25 ˚C I S ––56 A Pulsed reverse drain current T C = 25 ˚C I SM – – 224 Diode forward on-voltage I F = 96 A , VGS = 0 V SD – 1.3 1.6 V Reverse recovery time I F = IS, diF/dt = 100 A/ µs, VR = 100 V T j = 25 ˚C T j = 150 ˚C t rr – – 200 350 280 500 ns Reverse recovery charge I F = IS, diF/dt = 100 A/ µs, VR = 100 V T j = 25 ˚C T j = 150 ˚C Q rr – – 1.5 8.5 2.5 12 µC Repetitive peak reverse current I F = IS, diF/dt = 100 A/ µs, VR = 100 V T j = 25 ˚C T j = 150 ˚C I RRM – – 12 28 – – A BSM 151 F |
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