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BSM111AR Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BSM111AR
Description  SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSM111AR Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
25
BSM 111 AR
Electrical Characteristics
at
T
j = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS = 0, ID = 0.25 mA
V
(BR)DSS
100
V
Gate threshold voltage
V
DS = VGS, ID = 1 mA
V
GS(th)
2.1
3.0
4.0
Zero gate voltage drain current
V
DS = 100 V, VGS = 0
T
j = 25 ˚C
T
j = 125 ˚C
I
DSS
50
300
250
1000
µA
Gate-source leakage current
V
GS = 20 V, VDS = 0
I
GS
10
100
nA
Drain-source on-state resistance
V
GS = 10 V, ID = 130 A
R
DS(on)
7
8.5
m
Dynamic Characteristics
Forward transconductance
V
DS ≥ 2 × ID × RDS(on) max., ID = 130 A
g
fs
60
75
S
Input capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
iiss
–10
13
nF
Output capacitance
V
GS = 0 , VDS = 25 V, f = 1 MHz
C
oss
5
7.5
Reverse transfer capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
rss
1.8
2.7
Turn-on time
t
on (ton = td (on) + tr)
V
CC = 50 V, VGS = 10 V
I
D = 130 A, RGS = 3.3 Ω
t
d (on)
280
ns
t
r
220
Turn-off time
t
off (toff = td (off) + tf)
V
CC = 50 V, VGS = 10 V
I
D = 130 A, RGS = 3.3 Ω
t
d (off)
220
t
f
–60


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