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BSM111AR Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BSM111AR
Description  SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSM111AR Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
24
03.96
Type
Ordering Code
BSM 111 AR
C67076-S1013-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
100
V
Drain-gate voltage,
R
GS = 20 kΩ
V
DGR
100
Gate-source voltage
V
GS
± 20
Continuous drain current,
T
C = 25 ˚C
I
D
200
A
Pulsed drain current,
T
C = 25 ˚C
I
D puls
600
Operating and storage temperature range
T
j, Tstg
– 55 … + 150
˚C
Power dissipation,
T
C = 25 ˚C
P
tot
700
W
Thermal resistance
Chip-case
R
thJC
≤ 0.18
K/W
Insulation test voltage2),
t = 1 min.
V
is
2500
V
ac
Creepage distance, drain-source
16
mm
Clearance, drain-source
11
DIN humidity category, DIN 40 040
F
IEC climatic category, DIN IEC 68-1
55/150/56
1)
See chapter Package Outline and Circuit Diagrams.
2)
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
SIMOPAC® Module
BSM 111 AR
V
DS
= 100 V
I
D
= 200 A
R
DS(on) = 8.5 mΩ
q
Power module
q
Single switch
q
N channel
q
Enhancement mode
q
Package with insulated metal base plate
q
Package outline/Circuit diagram: 1
1)


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