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BSM100GT120DN2 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BSM100GT120DN2 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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Semiconductor Group 1 Aug-23-1996 BSM 100 GT 120 DN2 IGBT Power Module Target data sheet • Three single switches • Including fast free-wheeling diodes • Package with insulated metal base plate • Solderable Terminals Type VCE IC Package Ordering Code BSM 100 GT 120 DN2 1200V 150A TRIPACK C67070-A2520-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage RGE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC 100 150 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 200 300 Power dissipation per IGBT TC = 25 °C Ptot 680 W Chip temperature Tj + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.182 K/W Diode thermal resistance, chip case RthJCD ≤ 0.36 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 |
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