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Electronic Components Datasheet Search |
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BSM100GT120DN2 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BSM100GT120DN2 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
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Semiconductor Group 4 Aug-23-1996 BSM 100 GT 120 DN2 Power dissipation P tot = ƒ(TC) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0 50 100 150 200 250 300 350 400 450 500 550 600 W 700 P tot Safe operating area I C = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 3 10 A I C 10 0 10 1 10 2 10 3 V V CE DC 10 ms 1 ms 100 µs t p = 15.0µs Collector current I C = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 T C 0 10 20 30 40 50 60 70 80 90 100 110 120 130 A 150 I C Transient thermal impedance IGBT Z th JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W Z thJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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