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BSM100GB170DN2 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part No. BSM100GB170DN2
Description  IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM100GB170DN2 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

   
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Semiconductor Group
6
Aug-01-1996
BSM 100 GB 170 DN2
Typ. gate charge
V
GE = ƒ(QGate)
parameter: IC puls = 100 A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4 µC 1.7
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
1200 V
800 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
0
5
10
15
20
25
30
V
40
V
CE
-1
10
0
10
1
10
2
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
0
250
500
750
1000 1250 1500
V
2000
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/I
C
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH
0
250
500
750
1000 1250 1500
V
2000
V
CE
0
2
4
6
8
12
I
Csc
/I
C


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