 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BSM100GB170DN2 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
|
||||||||||||||||||||||||||||||
BSM100GB170DN2 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
|
|
6 / 9 page 
Semiconductor Group 6 Aug-01-1996 BSM 100 GB 170 DN2 Typ. gate charge V GE = ƒ(QGate) parameter: IC puls = 100 A 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 µC 1.7 Q Gate 0 2 4 6 8 10 12 14 16 V 20 V GE 1200 V 800 V Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 0 5 10 15 20 25 30 V 40 V CE -1 10 0 10 1 10 2 10 nF C Ciss Coss Crss Reverse biased safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V 0 250 500 750 1000 1250 1500 V 2000 V CE 0.0 0.5 1.0 1.5 2.5 I Cpuls /I C Short circuit safe operating area ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH 0 250 500 750 1000 1250 1500 V 2000 V CE 0 2 4 6 8 12 I Csc /I C |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
