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BSM100GB170DN2 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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BSM100GB170DN2 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
5 / 9 page ![]() Semiconductor Group 5 Aug-01-1996 BSM 100 GB 170 DN2 Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 0.0 1.0 2.0 3.0 4.0 V 6.0 V CE 0 20 40 60 80 100 120 140 160 A 200 I C 17V 15V 13V 11V 9V 7V Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 0.0 1.0 2.0 3.0 4.0 V 6.0 V CE 0 20 40 60 80 100 120 140 160 A 200 I C 17V 15V 13V 11V 9V 7V Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 0 2 4 6 8 10 V 14 V GE 0 50 100 150 200 250 300 A 400 I C |