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BSM100GB170DN2 Datasheet(PDF) 5 Page - Siemens Semiconductor Group

Part No. BSM100GB170DN2
Description  IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM100GB170DN2 Datasheet(HTML) 5 Page - Siemens Semiconductor Group

   
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Semiconductor Group
5
Aug-01-1996
BSM 100 GB 170 DN2
Typ. output characteristics
IC = f (VCE)
parameter:
tp = 80 µs, Tj = 25 °C
0.0
1.0
2.0
3.0
4.0
V
6.0
V
CE
0
20
40
60
80
100
120
140
160
A
200
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
IC = f (VCE)
parameter:
tp = 80 µs, Tj = 125 °C
0.0
1.0
2.0
3.0
4.0
V
6.0
V
CE
0
20
40
60
80
100
120
140
160
A
200
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
IC = f (VGE)
parameter:
tp = 80 µs, VCE = 20 V
0
2
4
6
8
10
V
14
V
GE
0
50
100
150
200
250
300
A
400
I
C


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