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SD553C40S50L Datasheet(PDF) 5 Page - Vishay Siliconix |
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SD553C40S50L Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 93177 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 5 SD553C..S50L Series Fast Recovery Diodes (Hockey PUK Version), 560 A Vishay High Power Products Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics 0 50 10 0 15 0 20 0 25 0 30 0 35 0 40 0 0 2 00 4 0 0 6 00 80 0 1 00 0 1 20 0 1 40 0 1 6 0 0 1 800 2 00 0 T = 1 2 5°C T = 2 5°C J J SD 55 3C . .S 5 0L S e ries Rat e O f Rise O f Fo rw a rd C u rre n t - d i/d t ( A / us) I V FP 4 4. 5 5 5. 5 6 6. 5 7 7. 5 8 8. 5 9 9. 5 10 10.5 10 10 0 1 000 Ra te Of Fa ll Of F orw a rd Current - d i/d t (A/µs ) 50 0 A I = 15 00 A Sin e Pu ls e 100 0 A SD 5 5 3 C ..S5 0 L Se rie s T = 1 2 5 ° C ; V > 100V J FM r 0 50 0 10 0 0 15 0 0 20 0 0 25 0 0 0 5 0 1 00 15 0 2 0 0 25 0 3 0 0 Ra te O f Fall O f Fo rward C urre nt - di/d t ( A/µs) SD 553C ..S5 0 L S e ries T = 1 2 5 °C ; V > 1 0 0 V I = 15 00 A Sine Pulse FM 1000 A 500 A J r 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 80 0 0 5 0 1 00 1 5 0 2 00 2 5 0 3 0 0 I = 1 5 00 A Sin e Puls e FM 1000 A 50 0 A R a te O f Fall O f Fo rwa rd Current - di/d t (A /µs) SD 5 5 3 C ..S5 0 L S e r ie s T = 1 2 5 °C ; V > 1 0 0 V J r 1E2 1E3 1E4 1E1 1E2 1E 3 1E 4 1 2 Pulse Basewidth (µs) 10 jo ules p e r p uls e 6 4 Si nu so id al Pu lse SD 553C ..S50L S eri es 0.8 0.6 0. 4 0.2 T = 1 25° C , V = 1 5 0 0 V J RRM dv /d t = 1 0 0 0 V/ µ s tp |
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