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BSM100GAL120DN2 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BSM100GAL120DN2
Description  IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BSM100GAL120DN2 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Mar-29-1996
BSM 100 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω
td(on)
-
130
260
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω
tr
-
80
160
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω
td(off)
-
400
600
Fall time
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω
tf
-
70
100
Free-Wheel Diode
Diode forward voltage
IF = 100 A, VGE = 0 V, Tj = 25 °C
IF = 100 A, VGE = 0 V, Tj = 125 °C
VF
-
-
1.8
2.3
-
2.8
V
Reverse recovery time
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs, Tj = 125 °C
trr
-
0.3
-
µs
Reverse recovery charge
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
-
14
4
-
-
µC


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