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1N4150 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # 1N4150
Description  Small Signal Fast Switching Diodes
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

1N4150 Datasheet(HTML) 1 Page - Vishay Siliconix

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1N4150
Document Number 85522
Rev. 1.8, 20-Aug-10
Vishay Semiconductors
www.vishay.com
1
94 9367
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• AEC-Q101 qualified
• High forward current capability
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free
according
to
IEC
61249-2-21
definition
Applications
• High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part
Ordering code
Type Marking
Remarks
1N4150
1N4150-TR or 1N4150-TAP
1N4150
Tape and Reel/Ammopack
Parameter
Test condition
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
50
V
Reverse voltage
VR
50
V
Peak forward surge current
tp = 1 µs
IFSM
4A
Average peak forward current
IFRM
600
mA
Forward continuous current
IF
300
mA
Average forward current
VR = 0
IFAV
150
mA
Power dissipation
l = 4 mm, TL = 45 °C
Ptot
440
mW
l = 4 mm, TL ≤ 25 °C
Ptot
500
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
350
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C


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