© 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FSFR-XS Series • Rev.1.0.1

4

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In

addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Symbol

Parameter

Min.

Max.

Unit

500

V

Low-Side Supply Voltage

-0.3

25.0

V

-0.3

25.0

V

High-Side Floating Supply Voltage

-0.3

525.0

V

Auto-Restart Pin Input Voltage

-0.3

V

Current-Sense (CS) Pin Input Voltage

-5.0

1.0

V

-0.3

5.0

V

Allowable Low-Side MOSFET Drain Voltage Slew Rate

50

V/ns

Total Power Dissipation

(3)

FSFR2100XS/L

12.0

W

FSFR1800XS/L

11.7

FSFR1700XS/L

11.6

FSFR1600XS/L

11.5

Maximum Junction Temperature

(4)

+150

°C

Recommended Operating Junction Temperature

(4)

-40

+130

Storage Temperature Range

-55

+150

°C

MOSFET Section

500

V

Gate Source (GND) Voltage

±30

V

Drain Current Pulsed

(5)

FSFR2100XS/L

32

A

FSFR1800XS/L

23

FSFR1700XS/L

20

FSFR1600XS/L

18

Continuous Drain Current

FSFR2100XS/L

10.5

A

6.5

FSFR1800XS/L

7.0

4.5

FSFR1700XS/L

6.0

3.9

FSFR1600XS/L

4.5

2.7

Package Section

Torque

Recommended Screw Torque

5~7

kgf·cm

Notes:

3.

Per MOSFET when both MOSFETs are conducting.

4.

The maximum value of the recommended operating junction temperature is limited by thermal shutdown.

5.

Pulse width is limited by maximum junction temperature.