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STT6802 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # STT6802
Description  3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT6802 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changes of specification will not be informed individually.
STT6802
3.3A , 30V , RDS(ON) 65 mΩ
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
15-Aug-2011 Rev. A
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS=0, ID=250uA
Gate-Threshold Voltage
VGS(th)
1.0
-
2.5
V
VDS=VGS, ID=250uA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
1
µA
VDS=30V, VGS=0
-
-
25
VDS=24V, VGS=0, TJ=70°C
Drain-Source On-Resistance
2
RDS(ON)
-
-
65
m
VGS=10V, ID=3A
-
-
90
VGS=4.5V, ID=2A
Forward Transconductance
gfs
-
4.0
-
S
VDS=5V, ID=3.0A
Dynamic
Total Gate Charge
2
Qg
-
3.1
-
nC
VDS=25V,
VGS=4.5V,
ID=3.0A
Gate-Source Charge
Qgs
-
1.2
-
Gate-Drain Charge
Qgd
-
1.6
-
Turn-on Delay Time
2
Td(on)
-
3.3
-
nS
VDS=15V,
VGS=10V,
RGEN=3.3 ,
RD=15 ,
ID=1A
Rise Time
Tr
-
2.5
-
Turn-off Delay Time
Td(off)
-
13.2
-
Fall Time
Tf
-
1.7
-
Input Capacitance
Ciss
-
200
-
pF
VGS=0,VDS=25V,f=1.0MHz
Output Capacitance
Coss
-
40
-
Reverse Transfer Capacitance
Crss
-
20
-
Reverse Transfer Capacitance
Rg
-
2.3
3.0
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
1.2
V
IS=0.9A, VGS=0V
Reverse Recovery Time
TRR
-
14
-
ns
IS=3.0A, VGS=0V
dI/dt=100A/µs
Reverse Recovery Charge
QRR
-
7.0
-
nC
Notes:
1.
Pulse width limited by Max. junction temperature.
2.
Pulse test
3.
Surface mounted on 1 in
2 copper pad of FR4 board, t≦5sec; 180℃/W when mounted on Min. copper pad.


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