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STT6802 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STT6802 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. STT6802 3.3A , 30V , RDS(ON) 65 mΩ Ω Ω Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 15-Aug-2011 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate-Threshold Voltage VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250uA Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V Drain-Source Leakage Current IDSS - - 1 µA VDS=30V, VGS=0 - - 25 VDS=24V, VGS=0, TJ=70°C Drain-Source On-Resistance 2 RDS(ON) - - 65 m VGS=10V, ID=3A - - 90 VGS=4.5V, ID=2A Forward Transconductance gfs - 4.0 - S VDS=5V, ID=3.0A Dynamic Total Gate Charge 2 Qg - 3.1 - nC VDS=25V, VGS=4.5V, ID=3.0A Gate-Source Charge Qgs - 1.2 - Gate-Drain Charge Qgd - 1.6 - Turn-on Delay Time 2 Td(on) - 3.3 - nS VDS=15V, VGS=10V, RGEN=3.3 , RD=15 , ID=1A Rise Time Tr - 2.5 - Turn-off Delay Time Td(off) - 13.2 - Fall Time Tf - 1.7 - Input Capacitance Ciss - 200 - pF VGS=0,VDS=25V,f=1.0MHz Output Capacitance Coss - 40 - Reverse Transfer Capacitance Crss - 20 - Reverse Transfer Capacitance Rg - 2.3 3.0 f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 VSD - - 1.2 V IS=0.9A, VGS=0V Reverse Recovery Time TRR - 14 - ns IS=3.0A, VGS=0V dI/dt=100A/µs Reverse Recovery Charge QRR - 7.0 - nC Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test 3. Surface mounted on 1 in 2 copper pad of FR4 board, t≦5sec; 180℃/W when mounted on Min. copper pad. |
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