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STT6602 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # STT6602
Description  N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT6602 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
15-Aug-2011 Rev. A
Page 2 of 7
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Drain-Source Breakdown
Voltage
N-Ch
BVDSS
30
-
-
V
VGS=0, ID=250µA
P-Ch
-30
-
-
VGS=0, ID=-250µA
Gate-Threshold Voltage
N-Ch
VGS(th)
1
-
2.5
V
VDS=VGS, ID=250µA
P-Ch
-1
-
-2.5
VDS=VGS, ID= -250µA
Forward Transconductance
N-Ch
gfs
-
4
-
S
VDS=5V, ID=3A
P-Ch
-
2
-
VDS= -5V, ID= -2A
Gate-Source Leakage Current
N-Ch
IGSS
-
-
±100
nA
VGS= ±20V
P-Ch
-
-
±100
VGS= ±20V
Drain-Source Leakage Current
N-Ch
IDSS
-
-
1
uA
VDS=30 V, VGS=0
P-Ch
-
-
-1
VDS= -30 V, VGS=0
N-Ch
-
-
25
VDS=24V, VGS=0
P-Ch
-
-
-25
VDS= -24V, VGS=0
Drain-Source On-Resistance
1
N-Ch
RDS(ON)
-
-
65
m
VGS=10V, ID=3A
P-Ch
-
-
120
VGS= -10V, ID= -2A
N-Ch
-
-
90
VGS=4.5V, ID=2A
P-Ch
-
-
170
VGS= -4.5V, ID= -1A
Total Gate Charge
1
N-Ch
Qg
-
3.1
-
nC
N-Channel
VDS=25V, VGS= 4.5V, ID= 3A
P-Channel
VDS= -25V, VGS= -4.5V, ID= -2.0A
P-Ch
-
3
-
Gate-Source Charge
N-Ch
Qgs
-
1.2
-
P-Ch
-
0.78
-
Gate-Drain Charge
N-Ch
Qgd
-
1.6
-
P-Ch
-
1.6
-
Turn-on Delay Time
1
N-Ch
Td(on)
-
3.3
-
nS
N-Channel
VDS= 15V, RG= 3.3 ,RD=15
VGS= 10V, ID= 1A
P-Channel
VDS= -15V, RG= 3.3 ,RD=15
VGS=-5V, ID= -1A
P-Ch
-
7
-
Rise Time
N-Ch
Tr
-
2.5
-
P-Ch
-
6
-
Turn-off Delay Time
N-Ch
Td(off)
-
13.2
-
P-Ch
-
15
-
Fall Time
N-Ch
Tf
-
1.7
-
P-Ch
-
7.5
-
Input Capacitance
N-Ch
Ciss
-
200
-
pF
N-Channel
VGS=0, VDS=25V, f=1.0MHz
P-Channel
VGS=0, VDS=-25V, f=1.0MHz
P-Ch
-
260
-
Output Capacitance
N-Ch
Coss
-
40
-
P-Ch
-
55
-
Reverse Transfer Capacitance
N-Ch
Crss
-
20
-
P-Ch
-
44
-
Gate Resistance
N-Ch
Rg
-
2.3
3.0
f=1.0MHz
P-Ch
-
4.3
5
Notes:
1.
Pulse test


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