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BPW34F Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BPW34F
Description  Silizium-PIN-Fotodiode mit Tageslichtsperrfilter
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BPW34F Datasheet(HTML) 3 Page - Siemens Semiconductor Group

  BPW34F Datasheet HTML 1Page - Siemens Semiconductor Group BPW34F Datasheet HTML 2Page - Siemens Semiconductor Group BPW34F Datasheet HTML 3Page - Siemens Semiconductor Group BPW34F Datasheet HTML 4Page - Siemens Semiconductor Group BPW34F Datasheet HTML 5Page - Siemens Semiconductor Group  
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BPW 34 F, BPW 34 FS
BPW 34 FS (E9087)
Semiconductor Group
3
1998-08-27
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 40 ... + 85
°C
Sperrspannung
Reverse voltage
V
R
32
V
Verlustleistung,
T
A = 25 °C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit
Spectral sensitivity
V
R = 5 V, Ee = 1 mW/cm
2
S
50 (
≥ 40)
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λ
S max
950
nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10 % von S
max
Spectral range of sensitivity
S = 10 % of S
max
λ
780 ... 1100
nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
7.00
mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L
× B
L
× W
2.65
× 2.65
mm
× mm
Halbwinkel
Half angle
ϕ± 60
Grad
deg.
Dunkelstrom,
V
R = 10 V
Dark current
I
R
2 (
≤ 30)
nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity
Sλ
0.59
A/W
Quantenausbeute
Quantum yield
η
0.77
Electrons
Photon
Leerlaufspannung,
E
e = 0.5 mW/cm
2
Open-circuit voltage
V
O
330 (
≥ 275)
mV


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