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BFY280 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFY280 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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Micro-X1 Semiconductor Group 1 Draft A04 1998-04-01 HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ f T = 7.2 GHz, F = 2.5 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 ESD: Electrostatic discharge sensitive device, observe handling precautions! (ql) Quality Level: P: Professional Quality, Ordering Code: Q97302026 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q97111414 (see Chapter Order Instructions for ordering example) 1) The maximum permissible base current for V FBE measurements is 5 mA (spot measurement duration < 1 s). 2) T S is measured on the collector lead at the soldering point to the pcb. Type Marking Ordering Code Pin Configuration Package BFY 280 (ql) - see below C E B E Micro-X1 Table 1 Maximum Ratings Parameter Symbol Limit Values Unit Collector-emitter voltage V CEO 8V Collector-emitter voltage, V BE = 0 V CES 15 V Collector-base voltage V CBO 15 V Emitter-base voltage V EBO 2V Collector current I C 10 mA Base current I B 1.2 1) mA Total power dissipation, T S £ 104 °C 2) P tot 80 mW Junction temperature T j 200 °C Operating temperature range T op - 65 É + 200 °C Storage temperature range T stg - 65 É + 200 °C Thermal Resistance Junction soldering point 2) R th JS < 450 K/W |
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