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BFY196 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFY196
Description  HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFY196 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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BFY 196
Semiconductor Group
3
Draft A03 1998-04-01
4)
Table 3
AC Characteristics at
T
A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Transition frequency
I
C = 70 mA, VCE = 5 V, f = 500 MHz
f
T
6
6.5
-
GHz
Collector-base capacitance
V
CB = 10 V, VBE = vbe = 0, f = 1 MHz
C
CB
-
1
1.3
pF
Collector-emitter capacitance
V
CE = 10 V, VBE = vbe = 0, f = 1 MHz
C
CE
-
0.44
-
pF
Emitter-base capacitance
V
EB = 0.5 V, VCB = vcb = 0, f = 1 MHz
C
EB
-
3.6
4.3
pF
Noise figure
I
C = 20 mA, VCE = 5 V, f = 2 GHz,
Z
S = ZSopt
F
-
3
3.5
dB
Power gain
I
C = 70 mA, VCE = 5 V, f = 2 GHz,
Z
S = ZSopt, ZL = ZLopt
G
ma
4)
10
11
-
dB
Transducer gain
I
C = 70 mA, VCE = 5 V, f = 2 GHz,
Z
S = ZL = 50 W
½S
21e½
2
45
-
dB
Output power
I
C = 80 mA, VCE = 5 V, f = 2 GHz,
P
IN = 15 dBm, ZS = ZL = 50 W
P
out
18.5
19.5
-
dBm
G
ma
S21
S12
----------- kk
2
1
Ð
Ð
() G
ms
,
S21
S12
-----------
==


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