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BFY193 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BFY193 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 5 page BFY 193 Semiconductor Group 3 Draft A03 1998-04-01 4) Table 3 AC Characteristics at T A = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Transition frequency I C = 40 mA, VCE = 5 V, f = 500 MHz I C = 50 mA, VCE = 8 V, f = 500 MHz f T 6.5 - 7.5 8 - - GHz Collector-base capacitance V CB = 10 V, VBE = vbe = 0, f = 1 MHz C CB - 0.56 0.75 pF Collector-emitter capacitance V CE = 10 V, VBE = vbe = 0, f = 1 MHz C CE - 0.34 - pF Emitter-base capacitance V EB = 0.5 V, VCB = vcb = 0, f = 1 MHz C EB - 1.9 2.4 pF Noise figure I C = 15 mA, VCE = 5 V, f = 2 GHz, Z S = ZSopt F - 2.3 2.9 dB Power gain I C = 40 mA, VCE = 5 V, f = 2 GHz, Z S = ZSopt, ZL = ZLopt G ma 4) 12.5 13.5 - dB Transducer gain I C = 40 mA, VCE = 5 V, f = 2 GHz, Z S = ZL = 50 W ½S 21e½ 2 89 - dB Output power I C = 50 mA, VCE = 5 V, f = 2 GHz, P IN = 10 dBm, ZS = ZL = 50 W P out 16.5 17.5 - dBm G ma S21 S12 ----------- kk 2 1 Ð Ð () G ms , S21 S12 ----------- == |
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