BFY193 datasheet(3/5 Pages) SIEMENS

Part #	BFY193

Description	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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BFY 193

Semiconductor Group

3

Draft A03 1998-04-01

4)

Table 3

AC Characteristics at

T

A = 25 °C unless otherwise specified

Parameter

Symbol

Limit Values

Unit

min.

typ.

max.

Transition frequency

I

C = 40 mA, VCE = 5 V, f = 500 MHz

I

C = 50 mA, VCE = 8 V, f = 500 MHz

f

T

6.5

-

7.5

8

-

GHz

Collector-base capacitance

V

CB = 10 V, VBE = vbe = 0, f = 1 MHz

C

CB

-

0.56

0.75

pF

Collector-emitter capacitance

V

CE = 10 V, VBE = vbe = 0, f = 1 MHz

C

CE

-

0.34

-

pF

Emitter-base capacitance

V

EB = 0.5 V, VCB = vcb = 0, f = 1 MHz

C

EB

-

1.9

2.4

pF

Noise figure

I

C = 15 mA, VCE = 5 V, f = 2 GHz,

Z

S = ZSopt

F

-

2.3

2.9

dB

Power gain

I

C = 40 mA, VCE = 5 V, f = 2 GHz,

Z

S = ZSopt, ZL = ZLopt

G

ma

4)

12.5

13.5

-

dB

Transducer gain

I

C = 40 mA, VCE = 5 V, f = 2 GHz,

Z

S = ZL = 50 W

½S

21e½

2

89

-

dB

Output power

I

C = 50 mA, VCE = 5 V, f = 2 GHz,

P

IN = 10 dBm, ZS = ZL = 50 W

P

out

16.5

17.5

-

dBm

G

ma

S21

S12

----------- kk

2

1

Ð

() G

ms

,

S21

S12

-----------

==

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