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BFY193 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BFY193
Description  HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFY193 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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BFY 193
Semiconductor Group
2
Draft A03 1998-04-01
Electrical Characteristics
3)
This test assures
V
(BR)CE0 > 12 V.
Table 2
DC Characteristics at
T
A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Collector-base cutoff current
V
CB = 20 V, IE = 0
I
CBO
--
100
mA
Collector-emitter cutoff current
V
CE = 12 V, IB = 0.5 mA
3)
I
CEX
--
600
mA
Collector-base cutoff current
V
CB = 10 V, IE = 0
I
CBO
--
50
nA
Emitter-base cutoff current
V
EB = 2 V, IC = 0
I
EBO
--
25
mA
Emitter-base cutoff current
V
EB = 1 V, IC = 0
I
EBO
--
0.5
mA
Base-emitter forward voltage
I
E = 30 mA, IC = 0
V
FBE
--
1V
DC current gain
I
C = 30 mA, VCE = 8 V
h
FE
50
100
175
-


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