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BFY180 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BFY180
Description  HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BFY180 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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BFY 180
Semiconductor Group
2
Draft A04 1998-04-01
Electrical Characteristics
3)
This test assures
V
(BR)CE0 > 8 V.
Table 2
DC Characteristics at
T
A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Collector-base cutoff current
V
CB = 10 V, IE = 0
I
CBO
--
100
mA
Collector-emitter cutoff current
V
CE = 8 V, IB = 0.05 mA
3)
I
CEX
--
50
mA
Collector-base cutoff current
V
CB = 8 V, IE = 0
I
CBO
--
50
nA
Emitter-base cutoff current
V
EB = 2 V, IC = 0
I
EBO
--
25
mA
Emitter-base cutoff current
V
EB = 1 V, IC = 0
I
EBO
--
0.5
mA
Base-emitter forward voltage
I
E = 3 mA, IC = 0
V
FBE
--
1V
DC current gain
I
C = 0.25 mA, VCE = 1 V
h
FE
30
100
175
-


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