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BFS482 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFS482
Description  NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BFS482 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
Dec-16-1996
BFS 482
NPN Silicon RF Transistor
• For low-noise, high-gain broadband amplifiers
at collector currents from 1mA to 20mA.
•
fT = 8GHz
F = 1.2dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFS 482
RGs
Q62702-F1573
1/4 = B
2/5 = E
3/6 = C
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
35
mA
Base current
IB
4
Total power dissipation
TS ≤ 81 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 275
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.


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