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BFS17W Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFS17W
Description  NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFS17W Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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Semiconductor Group
1
Nov-28-1996
BFS 17W
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector
currents from 1mA to 20mA
Type
Marking Ordering Code
Pin Configuration
Package
BFS 17W
MCs
Q62702-F1645
1 = B
2 = E
3 = C
SOT-323
Maximum Ratings of any single Transistor
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
15
V
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2.5
Collector current
IC
25
mA
Peak collector current
f
≥ 10 MHz
ICM
50
Total power dissipation
TS ≤ 93 °C
Ptot
280
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 205
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm


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