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BFS17W Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFS17W Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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Semiconductor Group 1 Nov-28-1996 BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration Package BFS 17W MCs Q62702-F1645 1 = B 2 = E 3 = C SOT-323 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collector current IC 25 mA Peak collector current f ≥ 10 MHz ICM 50 Total power dissipation TS ≤ 93 °C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 205 K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm |
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