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BFS17S Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFS17S
Description  NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFS17S Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Dec-18-1996
BFS 17S
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics of any single Transistor
Transition frequency
IC = 2 mA, VCE = 5 V, f = 200 MHz
IC = 25 mA, VCE = 5 V, f = 200 MHz
fT
1.3
1
2.5
1.4
-
-
GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Ccb
-
0.55
0.8
pF
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Cce
-
0.13
-
Input capacitance
VEB = 0.5 V, IC = 0 , f = 1 MHz
Cibo
-
1.45
-
Output capacitance
VCE = 5 V, VBE = vbe = 0 , f = 1 MHz
Cobs
-
-
1.5
Noise figure
IC = 2 mA, VCE = 5 V, f = 800 MHz
ZS = 0 Ω
F
-
3.5
5
dB
Transducer gain
IC = 8 mA, VCE = 8 V, ZS =ZL= 50 Ω
f = 900 MHz
f = 1.75 GHz
|
S21e|2
-
-
12
18
-
-
Linear output voltage
IC = 14 mA, VCE = 5 V, dim = 60 dB
f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Ω
V01=V02
-
100
-
mV
Third order intercept point
IC = 200 mA, VCE = 8 V, f = 900 MHz
ZS =ZL= 50 Ω
IP3
-
23
-
dBm


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