BFS17S datasheet(1/5 Pages) SIEMENS

Part #	BFS17S

Description	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

1

Dec-18-1996

BFS 17S

NPN Silicon RF Transistor

• For broadband amplifiers up to 1GHz

at collector currents from 1mA to 20mA

Tape loading orientation

Type

Marking Ordering Code

Pin Configuration

Package

BFS 17S

MCs

Q62702-F1645

1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363

Maximum Ratings of any single Transistor

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

15

V

Collector-base voltage

VCBO

25

Emitter-base voltage

VEBO

2.5

Collector current

IC

25

mA

Peak collector current

f

≥ 10 MHz

ICM

50

Total power dissipation

TS ≤ 83 °C

Ptot

280

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

- 65 + 150

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 240

K/W

1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm

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BFS17S Datasheet(PDF) 1 Page - Siemens Semiconductor Group

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