BFS17P datasheet(1/5 Pages) SIEMENS | NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

Part No.	BFS17P

Description	NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

1

Aug-02-1996

BFS 17P

NPN Silicon RF Transistor

• For broadband amplifiers up to 1GHz at collector

currents from 1mA to 20mA

• CECC-type available: CECC 50002/248.

Type

Marking Ordering Code

Pin Configuration

Package

BFS 17P

MCs

Q62702-F940

1 = B

2 = E

3 = C

SOT-23

Maximum Ratings of any single Transistor

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

15

V

Collector-base voltage

VCBO

25

Emitter-base voltage

VEBO

2.5

Collector current

IC

25

mA

Peak collector current

f

≥ 10 MHz

ICM

50

Total power dissipation

TS ≤ 55 °C

Ptot

280

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

- 65 + 150

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 340

K/W

1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm

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BFS17P Datasheet(PDF) 1 Page - Siemens Semiconductor Group

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