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BFR93P Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFR93P
Description  NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFR93P Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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BFR 93P
BFR 93P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
AC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Power gain
IC = 25 mA, VCE = 8 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Gpe
–13
GHz
Transition frequency
IC = 30 mA, VCE = 5 V, f = 200 MHz
IC = 50 mA, VCE = 5 V, f = 200 MHz
fT
5
4.7
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cce
0.28
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
0.9
dB
Noise figure
IC = 10 mA, VCE = 8 V, f = 10 MHz,ZS = 75
IC = 5 mA, VCE = 8 V, f = 500 MHz,ZS = ZSopt
IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50
F
1.7
1.9
2.4
pF
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
0.6
0.75
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
2.1
Transducer gain
IC = 25 mA, VCE = 8 V, f = 500 MHz, Z0 = 50
I S21e I 2
15.8
mV
Linear output voltage
two-tone intermodulation test
IC = 25 mA, VCE = 8 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
Vo1 = Vo2
240
dBm
Third order intercept point
IC = 25 mA, VCE = 8 V, f = 800 MHz
IP3
30.5


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