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BFR35AP Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFR35AP
Description  NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFR35AP Datasheet(HTML) 3 Page - Siemens Semiconductor Group

   
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Semiconductor Group
3
Dec-12-1996
BFR 35AP
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz
fT
3.5
5
-
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
0.38
0.6
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
-
0.2
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
-
0.7
-
Noise figure
IC = 2 mA, VCE = 6 V, ZS = ZSopt
f = 900 MHz
f = 1.8 GHz
F
-
-
2.9
1.8
-
-
dB
Power gain
2)
IC = 15 mA, VCE = 8 V, ZS = ZSopt
ZL = ZLopt
f = 900 MHz
f = 1.8 GHz
Gma
-
-
9.5
15
-
-
Transducer gain
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω
f = 900 MHz
f = 1.8 GHz
|
S21e|2
-
-
7
12.5
-
-
2)
Gma = |S21/S12| (k-(k2-1)1/2)


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