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BFR35AP Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BFR35AP Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
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Semiconductor Group 3 Dec-12-1996 BFR 35AP Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 3.5 5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.38 0.6 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.7 - Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F - - 2.9 1.8 - - dB Power gain 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Gma - - 9.5 15 - - Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz | S21e|2 - - 7 12.5 - - 2) Gma = |S21/S12| (k-(k2-1)1/2) |
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