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BFR35AP Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BFR35AP
Description  NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFR35AP Datasheet(HTML) 2 Page - Siemens Semiconductor Group

   
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Semiconductor Group
2
Dec-12-1996
BFR 35AP
Electrical Characteristics at
TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
15
-
-
V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES
-
-
10
µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO
-
-
100
nA
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
IEBO
-
-
100
µA
DC current gain
IC = 15 mA, VCE = 8 V
hFE
40
100
200
-


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