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BFR35AP Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFR35AP
Description  NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BFR35AP Datasheet(HTML) 1 Page - Siemens Semiconductor Group

  BFR35AP Datasheet HTML 1Page - Siemens Semiconductor Group BFR35AP Datasheet HTML 2Page - Siemens Semiconductor Group BFR35AP Datasheet HTML 3Page - Siemens Semiconductor Group  
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Semiconductor Group
1
Dec-12-1996
BFR 35AP
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFR 35AP
GEs
Q62702-F938
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
15
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2.5
Collector current
IC
30
mA
Base current
IB
4
Total power dissipation
TS ≤ 48 °C
Ptot
280
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 365
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.


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