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BFR280 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFR280
Description  NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFR280 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

   
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Semiconductor Group
1
Dec-11-1996
BFR 280
NPN Silicon RF Transistor
• For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
fT = 7.5GHz
F = 1.5dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFR 280
REs
Q62702-F1298
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
8
V
Collector-emitter voltage
VCES
10
Collector-base voltage
VCBO
10
Emitter-base voltage
VEBO
2
Collector current
IC
10
mA
Base current
IB
1.2
Total power dissipation
TS ≤ 115 °C
Ptot
80
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 425
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.


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